An approach to simulation of the electrical characteristics of device structures based on quasi-two-dimensional films is proposed and tested. The essence of this approach is determining the values of the necessary parameters set, which describe the electrophysical properties of the quasi-two-dimensional films and the processes of charge carriers transfer in them, by first-principles calculations or experimental measurements and further use of quantum-mechanical models after their correction within the framework of device-technological simulation. Using first-principles calculations, the values of the graphene electrophysical parameters are determined taking into account the energy impact of the silicon oxide layer. By device-technological simulation, using the results of first-principles calculations, the electrical characteristics of capacitor structure and graphene-based field effect transistor were obtained.
graphene field effect transistor, quasi-two-dimensional film, first-principles calculations, device-technological simulation, quantum-mechanical effects
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