MICROWAVE MONOLITHIC ICS OF BROADBAND AMPLIFIERS AS UNIVERSAL COMPONENTS OF MODERN ELECTRONIC EQUIPMENT
Abstract and keywords
Abstract (English):
A chronology of the development of monolithic broadband amplifiers based on the Darlington scheme is presented. The stages of the formation of the modern manufactured range of Darlington wideband amplifiers as an integral part of the electronic components for all types of electronic equipment are considered.

Keywords:
broadband amplifier, Darlington circuit, negative feedback, microwave amplifier, microwave monolithic IC
Text
Publication text (PDF): Read Download
References

1. Kalenkovich N. I., Borovikov S. M., Tkachuk A. M., Obrazcov N. S. Radioelektronnaya apparatura i osnovy ee konstruirovaniya. Minsk : BGUIR, 2008. 200 s.

2. Savchenko E. M., Pershin A. D., Budyakov A. S., Fonderkin K. I. Rezul'taty razrabotki SVCh MIS usiliteley maloy i sredney moschnosti // Tverdotel'naya elektronika. Slozhnye funkcional'nye bloki REA Materialy XII Nauchno-tehnicheskoy konferencii. Moskva. 2013. S. 78-81.

3. Titce U., Shenk K. Poluprovodnikovaya shemotehnika. 12-e izd. Tom II. M. : DMK Press, 2007. 728 s.

4. Shmakov N. D., Ivanyushkin R. Yu. Issledovanie usilitelya moschnosti beguschey volny na polevyh tranzistorah // Materialy mezhdunarodnoy nauchno-tehnicheskoy konferencii INTERMATIC-2016. M. : MIREA, 2016. S.

5. Darlington S. (Bell Labs), US Pat. No. 2,663,806, “Semiconductor signal translating device,” Dec. 1953.

6. Battjes Carl (Tektronics), US Pat. No. 4,236,119, “Monolithic Wideband Amplifier,” Nov. 1980.

7. MSA-0735, 0736, Cascadable Silicon Bipolar MMIC Amplifiers, Technical Data.

8. Shahnovich I. Tverdotel'nye SVCh pribory i tehnologii. Nevospetye geroi besprovodnoy revolyucii // ELEKTRONIKA : Nauka, Tehnologiya, Biznes, 2005, № 4.

9. Kobayashi K. W. et. al. GaAs Heterojunction Bipolar Transistor MMIC DC to 10 GHz Direct-Coupled Feedback Amplifier // IEEE GaAs IC Symposium. San Diego. CA. C. 87-90.

10. StandfordMicrodevices, SNA-586, datasheet.

11. StandfordMicrodevices, SNA-100, datasheet.

12. Beyer J. B., Prasad S. N., Bechker R. C., Nordman J. E., and Hohenwarter G. K. MESFET distributed amplifier design guidelines // IEEE Trans. Microwace Theory Tech. 1984. T. MTT-32, №. 3. S. 268-275.

13. Karthikeyan Krishnamurthy et. al. Broadband GaAs MESFET and GaN HEMT Resistive Feedback Power Amplifiers // IEEE JSSC. 2000. T. 35, № 9.

14. Kukielka J. F. and Snapp C. P. Wideband Monolithic Cascadable Feedback Amplifiers Using Silicon Bipolar Technology. IEEE press. 1985. C. 330-331.

15. Konig U., Gruhle A., Schuppen A. SiGe Devices and Circuits : Where are Advantages over III/V // GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995, San Diego, CA, USA. 1995. C. 14-17.

16. Schuppen A., Dietrich H., Gerlach S., Qhnemann H., Arndt J., Seiler U., Gotzfried R., Erben U., Schumacher H. SiGe-Technology for Mobile Communication Sistems // Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting (1996). S. 130-133.

17. SGA-6589 SGA-6589Z, DC-3500 MHz, Cascadable SiGe HBT MMIC Amplifier. Datasheet.

18. Ming-Chou Chiang, Shey-Shi Lu, Chin-Chun Meng, Shih-An Yu, Shih-Cheng Yang, and Yi-Jen Chan, Analysis, Design, and Optimization of InGaP-GaAs HBT Matched-Impedance Wide-Band Amplifiers With Multiple Feedback Loops // IEEE Journal of Solid-state Circuits. 2002. T. 37. S 694-701.

19. Kevin W. Kobayashi, High Linearity-Wideband PHEMT Darlington Amplifier with +40 dBm IP3 // Proceedings of Asian-Pacific Microwave Conference. 2006 Asia-Pacific Microwave Conference. S. 1035-1038.

20. Kobayashi K. W., US Pat. No. 6,972,630 B2, “Self-biased darlington amplifier”. Dec. 6, 2005.

21. Douglas M. Johnson, Henry Z. Liwinski, US Pat. No. 6,842,075 B2. Jan. 11, 2005.

22. Kobayashi K. W., US Pat. No. 6,933,787 B1, “Linearized darlington amplifier”. Aug. 23, 2005.

23. Kevin W. Kobayashi, et. al. 1-Watt Conventional and Cascoded GaN-SiC Darlington MMIC Amplifiers to 18 GHz // IEEE RFIC Symp. Honolulu. Hawaii. 2007. C. 585-588.

24. Kobayashi, K. et al. “A 2 Watt, Sub-dB Noise Figure GaN MMIC LNA-PA Amplifier with Multi-octave Bandwidth from 0.2-8 GHz.” 2007 IEEE/MTT-S International Microwave Symposium, 2007. C 619-622.

25. Kobayashi K. W. An 8-W 250-MHz to 3-GHz Decade-Bandwidth Low-Noise GaN MMIC Feedback Amplifier With > +51-dBm OIP3 // IEEE Journal of Solid State Circuits. 2012. T. 47, № 10. C. 2316-2326.

26. Chin-Wei Kuo, Hwann-Kaeo Chiou, An 18 to 33 GHz Fully-Integrated Darlington Power Amplifier With Guanella-Type Transmission-Line Transformers in 0.18um CMOS Technology // IEEE Microwave and Wireless Components Letters. 2013. T. 23, № 12. S. 668-670.

27. Chou, Min-Li et al. A broadband Darlington power amplifier using 0.5 µm GaN-on-SiC HEMT process. 2016 URSI Asia-Pacific Radio Science Conference. 2016. C. 1947-1948.

28. Lin, Yu-An et al. A 27-GHz 45-dB SFDR track-and-hold amplifier using modified darlington amplifier and cascoded SEF in 0.18-μm SiGe process // 2017 IEEE MTT-S International Microwave Symposium. 2017. C. 137-140.

29. Savchenko E. M., Budyakov A. S., Pershin A. D., Drozdov D. G., Kuz'min A. Yu., Siomko V. O. Novye razrabotki otechestvennyh SVCh MIS shirokopolosnyh usiliteley // Tverdotel'naya elektronika. Slozhnye funkcional'nye bloki REA. Materialy nauchno-tehnicheskoy konferencii. M. : 2015. S. 183-187.

30. Savchenko E. M., Kuz'min A. Yu. Shirokopolosnye sverhvysokochastotnye usiliteli na osnove bipolyarnyh i geterobipolyarnyh tranzistorov // Materialy mezhdunarodnoy nauchno-tehnicheskoy konferencii INTERMATIC-2018. M. : MIREA. 2018.

31. Shanwen Hu, Zhong Wang, Huai Gao, Li G. P. A Novel Darlington Cascode Broadband Drive Power Amplifier in 2μm InGaP/GaAs HBT Technology, WAMICON 2012 IEEE Wireless & Microwave Technology Conference, USA. 2012. S. 1-6.


Login or Create
* Forgot password?