Kiev, Ukraine
Moscow, Russian Federation
Results of works in the field of submillimeter waves sources creation based on silicon IMPATT diodes are presented. It is shown that minimum contour losses and maximum output power of devices are achieved by using of oscillating system based on an open radial line. Designs of radiation sources, equivalent electrical circuits and their base parameters in the temperature range from 77 K to 300 K are given.
generator, submillimeter diapason, terahertz diapason, silicon, IMPATT diode, radial line
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