Fryazino, Russian Federation
Fryazino, Moscow, Russian Federation
Fryazino, Moscow, Russian Federation
The article shows the method of constructing the MMIC power limiter. The purpose of this research is to increase the burnout level. We considered a classical two-stage cir-cuit on anti-parallel p-i-n diodes. The idea of increasing the burnout level is to redis-tribute currents, so that at the burnout power at the first and second stages, the current is equal to the saturation current – 0.41–0.45 A / 100 µm. To do this, a simulation of the circuits was carried out – the ratio of the capacity of the first to the second stage 1:1, 2:1, 3:1 and 4:1. The design circuits were manufactured at p-i-n diode GaAs tech-nology of JSC RPC “Istok” named after Shokin, the height of the diode barrier is 1,1 V / 1 mA, the breakdown voltage is 45 V / 100 µA. The results of probe measurements S-parameters of power limiters and measure-ments of dynamic characteristics in the fix-ture are presented. Devices in the frequency range from 1 GHz to 16 GHz have losses less than 0.8 dB and VSWR input and output less than 2. The burnout level in continu-ous power at a frequency of 10 GHz was: for topology 1:1 — 45.3 dBm, 2:1 — 48.3 dBm and for topology 3:1 — 49.6 dBm. Under the same conditions, serial MMIC power limiters of foreign company were investigated. The burnout power density was ~20 W / 100 µm of the periphery, for the JSC RPC “Istok” named after Shokin technology, which exceeds the level of the investigated foreign analogues.
p-i-n diode, MMIC, power limiter, GaAs, burnout level, high power handling, satura-tion current, burnout power density
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