CALCULATION-EXPERIMENTAL DETERMINATION OF CMOS- INTEGRATED MICROCIRCUITS’ RADIATION HARDNESS UNDER THE INFLUENCE OF GAMMA RADIATION
Abstract and keywords
Abstract (English):
The results of calculation-experimental determination (forecasting) of two types of CMOS-integrated microcircuits’ radiation hardness (interface transceivers, memory units) under the influence of Co60 gamma radiation are submitted. Analytical dose dependences of parameters of test MOS transistors and CMOS large-scale integrated circuits are obtained.

Keywords:
radiation hardness, integrated microcircuit, transistor, gamma radiation, forecasting
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References

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