PRODUCTION AND RESEARCH OF A MOLECULAR SINGLE-ELECTRON TRANSISTOR
Abstract and keywords
Abstract (English):
A thin-film single-electron molecular transistor with a molecule an aurophilic derivative of terpiridine based on the Rh atom was manufactured. A technique has been developed for isolating the side gates of the transistor, it is shown that the insulation resistance of the gate exceeds 1T, which reliably provides the field effect of the control electrode on the island of the transistor. Measurements of the current-voltage characteristics of the fabricated transistors at T=77.4 K showed that they have Coulomb blockade sections of 500-800 mV, which indicates a correlated (single-electron) nature of the electron transport in the resulting transistor and the formation, taking into account the structure of the molecule used, of a single-electron atomic transistor based on single atom of rhodium.

Keywords:
single-electron tunneling, molecules, nanolithography, nanostructures, nanotransistor, nanoelectronics, molecular electronics
Text
Publication text (PDF): Read Download
References

1. Averin D. V. and Likharev K. K. Single-electronics : Correlated transfer of single electrons and Cooper pairs in small tunnel junctions // Mesoscopic Phenomena in Solids, 1991. T. 30. S. 173.

2. Likharev K. K. Single-electron devices and their applications // Proceedings of the IEEE. 1999. T. 87, № 4. S. 606.

3. Beloglazkina E. K., Majouga A. G., Manzheliy E. A. et al. Mononuclear ruthenium(II) and rhodium(III) complexes with S-[4-(2,2:6′,2″-terpyridin-4′-yl)phenoxy]butyl ethanethioate and 4′-[4-(1,2-dithiolane-3-yl)butylcarboxy)phenyl]-2,2′:6′,2″-terpyridine : Synthesis, electrochemistry, antibacterial activity and catalytical application // Polyhedron, 2015. T. 85. S. 800-808.

4. Hu W. et al. Sub-10 nm electron beam lithography using cold development of poly (methylmethacrylate) //J. Vac. Sci. & Tech. B. 2004. V. 22. № 4. P. 1711.

5. Park H. et al. Fabrication of metallic electrodes with nanometer separation by electromigration //Applied Physics Letters. 1999. T. 75. № 2. S. 301-303.

6. Dagesyan S. A., Stepanov A. S., Soldatov E. S. et al. Properties of Extremely Narrow Gaps Between Electrodes of a Molecular Transistor // Journal of Superconductivity and Novel Magnetism. 2015. T. 28. S. 787-790.

7. Parshintsev A. A., Shorokhov V. V., Soldatov E. S. Study possibility of building a single-electron transistor based on a molecule with single atom charge center // Bull. Russ. Acad. Sci. Physics. 2017. T. 81, № 1. S. 38.


Login or Create
* Forgot password?