from 01.01.2021 until now
Scientific-Research Institute of Semiconductor Devices; Tomsk State University; State University of Control Systems and Radioelectronics
Sevastopol, Sevastopol, Russian Federation
The component of electrostatic field (E*) of periferia (El) was found by atomic force microscopy. The E* has a significant effect on the electrostatic system of AuNi / n-GaN Schottky contacts, that was experimentally confirmed.
gallium nitride, Schottky barrier, ohmic contact, work function, surface, KPFM, peripheral electric field
1. Torkhov N. A., Novikov V. A. The Effect of the Periphery of Metal-Semiconductor Schottky-Barrier Contacts on their Electrical Characteristics // Semiconductors. 2011. T. 45, № 1. C. 69-84.
2. Torkhov N. A. Effect of the Periphery of Metal-Semiconductor Contacts with Schottky Barriers on their Static Current-Voltage Characteristic // Semiconductors. 2010. T. 44, № 5. C. 1-12.
3. Torhov N. A., Bozhkov V. G., Ivonin I. V., Novikov V. A. Issledovanie raspredeleniya potenciala na lokal'no metallizirovannoy poverhnosti n-GaAs metodom atomno-silovoy mikroskopii // Poverhnost'. 2009. T. 11. C. 1-10.
4. Torhov N. A., Bozhkov V. G., Guschin S. M., Novikov V. A. Optimizaciya umnozhitel'nogo dioda Shottki millimetrovogo diapazona // 22-ya Mezhdunarodnaya Krymskaya konferenciya SVCh-tehnika i telekommunikacionnye tehnologii. Sevastopol', 2012. C. 635-636.
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6. Torhov N. A., Bozhkov V. G., Novikov V. A., Ivonin I. V. Issledovanie elektricheskih poley Ni/GaN kontaktov metall - poluprovodnik s bar'erom Shottki metodami atomno-silovoy mikroskopii // 25-ya Mezhdunarodnaya Krymskaya konferenciya SVCh-tehnika i telekommunikacionnye tehnologii. Sevastopol', 2015. C. 611-612.
7. Cornelia M., Carolus J., Krämer M. Gallium nitride-based microwave high-power heterostructure field-effect transistors : design, technology, and characterization. Eindhoven : Technische Universiteit Eindhoven. 2006. Proefschrift.
8. Torhov N. A. Vliyanie elektrostaticheskogo polya periferii na ventil'nyy fotoeffekt v kontaktah metall-poluprovodnik s bar'erom Shottki // FTP. 2018. T. 52, № 10. C. 1150.
9. Mamedov R. K. Kontakty metall - poluprovodnik s elektricheskim polem pyaten. Baku : BGU, 2003.
10. Torhov N. A. Vliyanie foto-EDS na tokoprohozhdenie v kontaktah metall - poluprovodnik s bar'erom Shottki // FTP. 2011. T. 45, № 7.C. 965-973.
11. Torhov N. A. Poverhnostnyy potencial kontaktov metall - poluprovodnik s bar'erom Shottki // Izvestiya VUZov. Fizika. 2008. Deponirovano v VINITI № 334-V2008 ot 18.04.2008.
12. Torkhov N. A., Babak L. I., Kokolov A. A., Salnikov A. S., Dobush I. M., Novikov V. A., Ivonin I. V. Nature of size effects in compact models of field effect transistors // Journal of Applied Physics. 2016. T. 119. C. 094505.
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