Аннотация и ключевые слова
Аннотация (русский):
Optimization of the structure of a planar Schottky diode with a whisker and an air anode lead allowed to obtain 198 GHz bandwidth (fractional bandwidth of 16.5 %) at a central frequency of ~1200 GHz and reduce insertion losses of 3.4 dB at a noise temperature of ~3300 K.

Ключевые слова:
planar Schottky diode, compact model, THz-range, small-signal S-parameters
Текст
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Список литературы

1. N. A. Torkhov, L. I. Babak, A. A. Kokolov, “On the Application of Schottky Contacts in the Microwave, Extremely High Frequency, and THz Ranges,” Semiconductors, vol. 53, no. 12, pp. 1688–1698, 2019, doi:https://doi.org/10.1134/S1063782619160280.

2. N. A. Torkhov, “Method of manufacturing diode with terahertz range whisker,” RF patent no. 2635853, Nov. 16, 2017.

3. N. A. Torkhov, “Compact terahertz whisker diode,” RF patent no. 176768, Jan. 19, 2018.

4. I. Mehdi, J. V. Siles, C. Lee, and E. Schlecht, “THz Diode Technology: Status, Prospects, and Applications,” Proceedings of the IEEE, vol. 105, no. 6, pp. 990–1007, Jun. 2017, doi: https://doi.org/10.1109/jproc.2017.2650235.

5. P. R. Wilkinson, “Development of 664 GHz Sub-harmonic Mixers,” Ph.D. dissertation, Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, 2014.


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